Abstract

Artificial diamond is being a very common material recently such as gem stones as well as

mechanical tools. This material has several superior material constants, especially for power

device applications. Based on the wider band gap, higher saturation carrier velocity, higher

thermal conductivity, and so on than those of Si, SiC, and GaN, diamond has been considered

to be the promising candidate material to realize higher performance power devices, which

can work even under harsh environment.

In addition, recent industrial interest is in its thermal conductivity, which is the highest in

the materials. Also, spintronics applications of diamond is one of the hottest topics of diamond

research, where specific defect-centers are expected to realize several kinds of sensors with

atomic level resolution even under room temperature.

For realization of above applications, it is indispensable to establish a way to produce diamond

wafers with reduced cost and improved quality. From the artificial diamond was firstly shown in '70s,

the commercialized size was not been remarkably changed until recently. In this 10 years, some

technical breakthroughs were achieved. In this presentation, current status and future prospect

brief introduction

Hideaki Yamada received his Phd dgree from Niigata University at 2002

for work on equilibrium and stability analysis of thermonuclear fusion plasmas.

Then, he worked for Kyoto University as a pos-doc until 2004.

The research topic in that period was fundamental study to understand mechanism

of plasma etching of organic polymers, which were candidate low-k materials in ICs.

From 2004, he started to work for AIST. The current interest is in efficient techniques

to produce inch size diamond wafers, and related plasma chemistry. He received the Prime

minister award 2017 for the work on diamond wafer.